Type: | Hall Type |
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Output Signal Type: | Analog Output |
Production Process: | SemiConductor Integrated |
Material: | Plastic |
Accuracy Grade: | 0.7g |
Application: | Hybrid Battery Pack Current Sensing |
Samples: |
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Customization: |
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Electrical data:(Ta=25ºC,Vc=+5.0VDC,RL=2Kilohm,CL=10000pF) | ||||
Parmeter Ref |
CHB02ES5S2H | CHB10ES5S2H | CH25ES5S2H | CHB50ES5S2H |
Rated input Ipn(A) | 02 | 10 | 25 | 50 |
Measuring range Ip(A) | 0~±02 | 0~±10 | 0~±25 | 0~±50 |
Turns ratio Np/NS (T) | 1:400 | 1:1000 | 1:2000 | 1:2000 |
Inside resistance RM(ohm) | 200±0.1% | 50±0.1% | 40±0.1% | 20±0.1% |
Output voltage Vo(V) | 2.500±2.000*(IP/IPN) | |||
Output voltage Vo(V) | @IP=0,T=25°C 2.500 | |||
Reference voltage VR(V) | @Internal reference,re out 2.500 | |||
Supply voltage VC(V) | +5.0 ±5% | |||
Accuracy XG(%) | @IPN,T=25°C < ±0.5 | |||
Offset voltage VOE(mV) | @IP=0,T=25°C < ±10 (<±30mV@IPN=2A) | |||
Temperature variation of VOE VOT(mV/°C) | @IP=0,-40 ~ +85°C < ±0.05 |
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Linearity error εr(%FS) | < 0.1 | |||
Di/dt accurately followed(A/µs) | > 50 | |||
Response time tra(µs) | @90% of IPN < 1.0 | |||
Power consumption IC(mA) | 10+Is | |||
Bandwidth BW(KHZ) | @-3dB,IPN DC-200 | |||
Insulation voltage Vd(KV) | @50/60Hz, 1min,AC 3.0 |
General data: | |
Parameter | Value |
Operating temperature TA(°C) | -40 ~ +85 |
Storage temperature TS(°C ) | -55~ +125 |
Mass M(g ) | 13 |
Plastic material | PBT G30/G15, UL94- V0; |
Standards | IEC60950-1:2001 |
EN50178:1998 | |
SJ20790-2000 |
Dimensions(mm): | |
Connection | |
General tolerance | |
General tolerance:< ±0.2mm Primary through-hole: D8.2±0.15mm; Secondary pin: 4pin 0.65*0.65; |
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